Installation type | Surface mount |
packing | TR,CT |
series | - |
Part status | On sale |
working temperature | -55°C ~ 150°C(TJ) |
Encapsulation/Housing | 6-XFDFN Exposed Pad |
Warehouse | China/Hong Kong |
quality | Original genuine |
Power - maximum | 285mW(Ta) |
FET Type | N and P Channel Complementary type |
Drain source voltage (Vdss) | 30V |
Current at 25 ° C - continuous drain (Id) | 590mA(Ta),410mA(Ta) |
On resistance (maximum) for different Ids and Vgs | 670 mΩ @ 590mA,4.5V,1.4 Ω @ 410mA,4.5V |
Vgs (th) (maximum) for different Ids | 950mV @ 250µA |
Gate charge (Qg) at different Vgs (maximum) | 1.05nC @ 4.5V,1.2nC @ 4.5V |
Input capacitance at different Vds (Ciss) (maximum) | 30.3pF @ 15V,43.2pF @ 15V |
FET function | standard |